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18 Opgave:for MOS-FET transistoren IRF510 A: Bestem r DS, r o, V t og B: I triode regionen opførede drain source sig som en modstand når v GD >Vtn. Hvad er værdien af den største modstand og mindste? (find gerne resultatet med simulering)
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28 Figure 5.13 Circuit symbols for BJTs.
29 Figure 5.14 Voltage polarities and current flow in transistors biased in the active mode.
30 The iC –vCE characteristics of a practical BJT. Conceptual circuit for measuring the iC –vCE characteristics of the BJT.
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32 The circuit a) of with the signal source vbe eliminated for dc (bias) analysis. Conceptual circuit to illustrate the operation of the transistor as an amplifier.
33 Linear operation of the BJT transistor under the small-signal condition
34 Basic BJT digital logic inverter.
35 Sketch of the voltage transfer characteristic of the inverter circuit
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